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核友管理編號		 Manufacturer Series FET Type Drain to Source Voltage (Vdss) Drive Voltage (Max Rds On, Min Rds On) Current - Continuous Drain (Id) @ 25°C Input Capacitance (Ciss) (Max) @ Vds Power Dissipation (Max) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Operating Temperature Range Applications Automotive Mounting Type Device Package Technology FET Feature
質量保證
B-1 		來自供應商的訂
4  

預計 11個工作天

核友型號：st75139504

Infineon Technologies OptiMOS? N-Channel 80V 6V, 10V 300A(Tc) 16250 pF @ 40 V 375W(Tc) 1.2mOhms @ 100A, 10V 3.8V @ 275μA 231 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Surface Mount PG-HSOF-8-1 Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂
8  

預計 11個工作天

核友型號：st75139505

Infineon Technologies OptiMOS?-5 N-Channel 80V 6V, 10V 300A(DC) 13178 pF @ 40 V 300W(Tc) 1.4mOhms @ 100A, 10V 3.8V @ 230μA 187 nC @ 10 V ±20V -55°C ~ 175°C(TJ) Surface Mount PG-HSOF-8-1 Mosfet (Metal Oxide)
質量保證
B-1 		來自供應商的訂
16  

預計 11個工作天

核友型號：st75139784

Infineon Technologies CoolGaN? N-Channel 600V 10A(Tc) 157 pF @ 400 V 62.5W(Tc) 1.6V @ 960μA -10V -10V -55°C ~ 150°C(TJ) Surface Mount PG-LSON-8-1 Ganfet (Gallium Nitride)
質量保證
B-1 		來自供應商的訂

IGO60R070D1
INFINEON

96,549  

預計 8個工作天

核友型號：st73307568

Infineon Technologies
質量保證
B-1 		來自供應商的訂

IGO60R070D1
INFINEON

1  

預計 11個工作天

核友型號：st75139785

Infineon Technologies
質量保證
B-1 		來自供應商的訂

IGT65R035D2
INFINEON

200 24+  

預計 11個工作天

核友型號：st75028509

質量保證
B-1 		來自供應商的訂

IMBF170R450M1
INFINEON

420 23+  

預計 11個工作天

核友型號：st75028631

質量保證
B-1 		來自供應商的訂

IMBF170R450M1
INFINEON

1,000 21+22+  

預計 16個工作天

核友型號：st76078793

質量保證
B-1 		來自供應商的訂
1  

預計 11個工作天

核友型號：st75140089

Infineon Technologies CoolSiC? N-Channel 650V 18V 63A(Tc) 1643 pF @ 400 V 234W(Tc) 42mOhms @ 29.5A, 18V 5.7V @ 8.8mA 49 nC @ 18 V +23V, -5V -55°C ~ 175°C(TJ) Surface Mount PG-TO263-7-12 Sicfet (Silicon Carbide)
質量保證
B-1 		來自供應商的訂
2  

預計 11個工作天

核友型號：st75140090

Infineon Technologies CoolSiC? N-Channel 650V 18V 45A(Tc) 1118 pF @ 400 V 183W(Tc) 64mOhms @ 20.1A, 18V 5.7V @ 6mA 33 nC @ 18 V +23V, -5V -55°C ~ 175°C(TJ) Surface Mount PG-TO263-7-12 Sicfet (Silicon Carbide)
質量保證
B-1 		來自供應商的訂
1  

預計 11個工作天

核友型號：st75140091

Infineon Technologies CoolSiC? N-Channel 650V 18V 39A(Tc) 930 pF @ 400 V 161W(Tc) 74mOhms @ 16.7A, 18V 5.7V @ 5mA 28 nC @ 18 V +23V, -5V -55°C ~ 175°C(TJ) Surface Mount PG-TO263-7-12 Sicfet (Silicon Carbide)
質量保證
B-1 		來自供應商的訂
2  

預計 11個工作天

核友型號：st75140092

Infineon Technologies CoolSIC? M1 N-Channel 650V 18V 33A(Tc) 744 pF @ 400 V 140W(Tc) 94mOhms @ 13.3A, 18V 5.7V @ 4mA 22 nC @ 18 V +23V, -5V -55°C ~ 175°C(TJ) Surface Mount PG-TO263-7-12 Sicfet (Silicon Carbide)
質量保證
B-1 		來自供應商的訂
2  

預計 11個工作天

核友型號：st75140093

Infineon Technologies CoolSIC? M1 N-Channel 650V 18V 28A(Tc) 624 pF @ 400 V 126W(Tc) 111mOhms @ 11.2A, 18V 5.7V @ 3.3mA 19 nC @ 18 V +23V, -5V -55°C ~ 175°C(TJ) Surface Mount PG-TO263-7-12 Sicfet (Silicon Carbide)
質量保證
B-1 		來自供應商的訂

IMT65R057M1H
INFINEON

100 23+  

預計 11個工作天

核友型號：st75028506

質量保證
B-1 		來自供應商的訂
1  

預計 11個工作天

核友型號：st75140125

Infineon Technologies CoolSiC? N-Channel 1200V 15V, 18V 127A(Tc) 4580 nF @ 25 V 455W(Tc) 18.4mOhms @ 54.3A, 18V 5.2V @ 23.4mA 110 nC @ 18 V +20V, -5V -55°C ~ 175°C(TJ) Through Hole PG-TO247-3 Sicfet (Silicon Carbide)
質量保證
B-1 		來自供應商的訂

IMW120R045M1
INFINEON

240 23+  

預計 11個工作天

核友型號：st75028848

Infineon Technologies Standard
質量保證
B-1 		來自供應商的訂
5  

預計 11個工作天

核友型號：st75140126

Infineon Technologies CoolSiC? N-Channel 1200V 15V, 18V 13A(Tc) 289 pF @ 800 V 75W(Tc) 286mOhms @ 4A, 18V 5.7V @ 1.6mA 8.5 nC @ 18 V +23V, -7V -55°C ~ 175°C(TJ) Through Hole PG-TO247-3-41 Sicfet (Silicon Carbide)
質量保證
B-1 		來自供應商的訂
1  

預計 11個工作天

核友型號：st75140127

Infineon Technologies CoolSIC? M1 N-Channel 650V 18V 47A(Tc) 2131 pF @ 400 V 189W(Tc) 34mOhms @ 38.3A, 18V 5.7V @ 11mA 62 nC @ 18 V +23V, -5V -55°C ~ 150°C(TJ) Through Hole PG-TO247-3-41 Sicfet (Silicon Carbide)
質量保證
B-1 		來自供應商的訂
1  

預計 11個工作天

核友型號：st75140128

Infineon Technologies CoolSiC? N-Channel 650V 18V 46A(Tc) 1393 pF @ 400 V 176W(Tc) 50mOhms @ 25A, 18V 5.7V @ 7.5mA 41 nC @ 18 V +20V, -2V -55°C ~ 175°C(TJ) Through Hole PG-TO247-3-41 Sicfet (Silicon Carbide)
質量保證
B-1 		來自供應商的訂
1  

預計 11個工作天

核友型號：st75140129

Infineon Technologies CoolSIC? M1 N-Channel 650V 18V 39A(Tc) 1118 pF @ 400 V 125W(Tc) 64mOhms @ 20.1A, 18V 5.7V @ 6mA 33 nC @ 18 V +23V, -5V -55°C ~ 150°C(TJ) Through Hole PG-TO247-3-41 Sicfet (Silicon Carbide)
質量保證
B-1 		來自供應商的訂
1  

預計 11個工作天

核友型號：st75140130

Infineon Technologies CoolSiC? N-Channel 650V 18V 35A(Tc) 930 pF @ 400 V 133W(Tc) 74mOhms @ 16.7A, 18V 5.7V @ 5mA 28 nC @ 18 V +20V, -2V -55°C ~ 175°C(TJ) Through Hole PG-TO247-3-41 Sicfet (Silicon Carbide)
質量保證
B-1 		來自供應商的訂
10  

預計 11個工作天

核友型號：st75140131

Infineon Technologies CoolSIC? M1 N-Channel 650V 18V 26A(Tc) 744 pF @ 400 V 96W(Tc) 94mOhms @ 13.3A, 18V 5.7V @ 4mA 22 nC @ 18 V +23V, -5V -55°C ~ 150°C(TJ) Through Hole PG-TO247-3-41 Sicfet (Silicon Carbide)
質量保證
B-1 		來自供應商的訂
38  

預計 11個工作天

核友型號：st75140132

Infineon Technologies CoolSiC? N-Channel 650V 18V 20A(Tc) 496 pF @ 400 V 75W(Tc) 142mOhms @ 8.9A, 18V 5.7V @ 3mA 15 nC @ 18 V +23V, -5V -55°C ~ 150°C(TJ) Through Hole PG-TO247-3-41 Sicfet (Silicon Carbide)
質量保證
B-1 		來自供應商的訂
2  

預計 11個工作天

核友型號：st75140139

Infineon Technologies CoolSiC? N-Channel 1200V 15V, 18V 26A(Tc) 707 pF @ 800 V 115W(Tc) 117mOhms @ 8.5A, 18V 5.7V @ 3.7mA 21 nC @ 18 V +23V, -7V -55°C ~ 175°C(TJ) Through Hole PG-TO247-4-1 Sicfet (Silicon Carbide)
質量保證
B-1 		來自供應商的訂
1  

預計 11個工作天

核友型號：st75140140

Infineon Technologies CoolSiC? N-Channel 1200V 15V, 18V 19A(Tc) 454 pF @ 800 V 94W(Tc) 182mOhms @ 6A, 18V 5.7V @ 2.5mA 13 nC @ 18 V +23V, -7V -55°C ~ 175°C(TJ) Through Hole PG-TO247-4-1 Sicfet (Silicon Carbide)
質量保證
B-1 		來自供應商的訂
2  

預計 11個工作天

核友型號：st75140141

Infineon Technologies CoolSiC? N-Channel 1200V 15V, 18V 4.7A(Tc) 182 pF @ 800 V 60W(Tc) 350mOhms @ 2A, 18V 5.7V @ 1mA 5.3 nC @ 18 V +23V, -7V -55°C ~ 175°C(TJ) Through Hole PG-TO247-4-1 Sicfet (Silicon Carbide)
質量保證
B-1 		來自供應商的訂
3  

預計 11個工作天

核友型號：st75140144

Infineon Technologies CoolSiC? N-Channel 1200V 15V, 18V 225A(Tc) 9170 nF @ 25 V 750W(Tc) 9.9mOhms @ 108A, 18V 5.2V @ 47mA 220 nC @ 18 V +20V, -5V -55°C ~ 175°C(TJ) Through Hole PG-TO247-4-8 Sicfet (Silicon Carbide)
質量保證
B-1 		來自供應商的訂

IMZA120R030M1H
INFINEON

1  

預計 11個工作天

核友型號：st75140145

質量保證
B-1 		來自供應商的訂
2  

預計 11個工作天

核友型號：st75140146

Infineon Technologies CoolSiC? N-Channel 650V 18V 59A(Tc) 2131 pF @ 400 V 189W(Tc) 34mOhms @ 38.3A, 18V 5.7V @ 11mA 63 nC @ 18 V +23V, -5V -55°C ~ 150°C(TJ) Through Hole PG-TO247-4-3 Sicfet (Silicon Carbide)
質量保證
B-1 		來自供應商的訂
5  

預計 11個工作天

核友型號：st75140147

Infineon Technologies CoolSiC? N-Channel 650V 18V 53A(Tc) 1643 pF @ 400 V 197W(Tc) 42mOhms @ 29.5A, 18V 5.7V @ 8.8mA 48 nC @ 18 V +20V, -2V -55°C ~ 175°C(TJ) Through Hole PG-TO247-4-3 Sicfet (Silicon Carbide)
質量保證
B-1 		來自供應商的訂
30  

預計 11個工作天

核友型號：st75140148

Infineon Technologies CoolSiC? N-Channel 650V 18V 39A(Tc) 1118 pF @ 400 V 125W(Tc) 64mOhms @ 20.1A, 18V 5.7V @ 6mA 33 nC @ 18 V +23V, -5V -55°C ~ 150°C(TJ) Through Hole PG-TO247-4-3 Sicfet (Silicon Carbide)

Recommended Rectifiers - FETs