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核友管理編號		 Manufacturer Series IGBT Type Input Type Voltage - Collector Emitter Breakdown (Max) Current - Collector (Ic) (Max) Power - Max Td (on/off) @ 25°C Vce(on) (Max) @ Vge, Ic Gate Charge Switching Energy Test Condition Operating Temperature Range Applications Automotive Mounting Type Device Package Delete Delete Delete
Partner Stock

APT40GR120B2SCD10

APT40GR120B2SCD10
MICROSEMI CORPORATION

   

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IGBT NPT 1200 V 88 A 500 W Through Hole TO-247

Microsemi Corporation - NPT Standard 1200 V 88 A 500 W 20ns/166ns 3.2V @ 15V, 40A 210 nC 929µJ (on), 1070µJ (off) 600V, 40A, 4.3Ohm, 15V -55°C ~ 150°C (TJ) Through Hole TO-247
Partner Stock

APT44GA60BD30C

APT44GA60BD30C
MICROSEMI CORPORATION

   

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IGBT PT 600 V 78 A 337 W Through Hole TO-247 [B]

Microsemi Corporation POWER MOS 8™ PT Standard 600 V 78 A 337 W 16ns/102ns 1.6V @ 15V, 26A 128 nC 409µJ (on), 450µJ (off) 400V, 26A, 4.7Ohm, 15V - Through Hole TO-247 [B]
Partner Stock

APT50GF60JCU2

APT50GF60JCU2
MICROSEMI CORPORATION

   

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IGBT Module NPT Single 600 V 70 A 277 W Chassis, Stud Mount SOT-227

Microsemi Corporation - NPT 600 V 250 µA 70 A Standard 2.2 nF @ 25 V 277 W No 2.45V @ 15V, 50A Single -55°C ~ 150°C (TJ) Chassis, Stud Mount SOT-227

Recommended Rectifiers - IGBT discrete/single