2N7002LT1G

ON SEMICONDUCTOR

Documents

Datasheet

2N7002LT1G Discrete single

RoHS Status

RoHS

Images are for reference only.
See product Specifications.

Inventory Information

Available QTY

1

Real-time
stock quantity

MOQ:1 SPQ:1

Stock type

Quality-guaranteed

Supplier Rank:A-4
Packing Type:cut tape
COO :CN
Management ID:st33423819
Date Code:2011

Product Attributes

Category Discrete semiconductors
Manufacturer ON SEMICONDUCTOR
Case/PackageSOT-23-3
Contact PlatingTin
Continuous Drain Current (ID)115 mA
Current Rating115 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance7.5 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Halogen FreeHalogen Free
Height1.01 mm
Input Capacitance50 pF
Lead FreeLead Free
Length3.04 mm
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Channels1
Number of Elements1
Number of Pins3
PackagingCut Tape
Power Dissipation225 mW
Radiation HardeningNo
Rds On Max7.5 Ω
REACH SVHCNo SVHC
Resistance7.5 Ω
Schedule B8541210080
Threshold Voltage1 V
Turn-Off Delay Time40 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)60 V
Width1.4 mm
Series-
FET TypeMOSFET Nch、Oxidized Metal
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id)@25°C115mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)[email protected]、10V
Rds On (Max)@Id (Vgs)[email protected]μA
Gate Charge (Max)@Vgs (Qg)-
Input Capacitance (Max)@Vds (Ciss)[email protected]
Power Dissipation (Max)225mW
Operating Temperature
Application
Mounting TypeSurface Mount
PackageSOT-23 3pin(TO-236)
QuantityUnit price (FOB JAPAN)
1~9 $2.04
10~49 $0.96
50~99 $0.67
100~499 $0.52
500~999 $0.47
1,000~1,999 $0.44
2,000~3,999 $0.43
4,000~ $0.41
Pricing (USD)Total Amount
Quantity