2SD1980TL

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DataSheet


Product Specifications

CategoryDiscrete semiconductors
ManufacturerROHM
Transistor TypeNPN - Darlington
Voltage - Collector Emitter Breakdown (Maximum)100V
Current - Collector Interrupt (max)10 μA(ICBO)
Current - Collector (Ic) (Max)2A
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 1A, 2V
Power - MaximumTO-126N
Vce saturation (max) @lb, Ic1.5V @ 1mA, 1A
Product OverviewTRANS NPN DARL 100V 2A CPT3
Operating Temperature Range150°C (TJ)
Mounting TypeAEC-Q101
Device PackageCPT3

・This information is intended to provide a brief overview of the item.

・For a more comprehensive explanation of this product, please refer to the manufacturer's
    official data sheet.

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