Product Attributes

Category Discrete semiconductors
Manufacturer ROHM
FET TypeSiC MOSFET
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id)@25°C24A
Power Dissipation (Max)134W
Operating Temperature-55〜175°C

・Product description information is provided for convenience to provide an overview of the product.

・Please refer to the data sheet issued by the manufacturer for the relevant official information.

Alternative Part Numbers

QuantityUnit price (FOB JAPAN)
1~4 $16.701
5~9 $11.865
10~29 $10.949
30~49 $10.523
50~59 $10.438
60~99 $10.417
100~199 $10.374
200~ $10.342
Pricing (USD)Total Amount
Quantity