Product Attributes

Category Discrete semiconductors
Manufacturer ROHM
Case/PackageTO-220-3
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance115 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time60 ns
Gate to Source Voltage (Vgs)20 V
Height15.4 mm
Input Capacitance2.1 nF
Lead FreeLead Free
Length10.3 mm
Max Operating Temperature150 °C
Max Power Dissipation86 W
Min Operating Temperature-55 °C
MountThrough Hole
Number of Channels1
Number of Pins3
Number of Terminals3
PackagingBulk
Rds On Max130 mΩ
REACH SVHCNo SVHC
Rise Time55 ns
Threshold Voltage4 V
Turn-Off Delay Time190 ns
Turn-On Delay Time40 ns
Weight2.565008 g
Width4.8 mm
Series
FET TypeMOSFET Nch
FET Feature
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id)@25°C30A
Drive Voltage (Max Rds On, Min Rds On)0.115Ohms
Rds On (Max)@Id (Vgs)
Gate Charge (Max)@Vgs (Qg)85nC
Input Capacitance (Max)@Vds (Ciss)
Power Dissipation (Max)
Operating Temperature
Application
Mounting TypeThrough Hole
PackageTO-220FM

Alternative Part Numbers

QuantityUnit price (FOB JAPAN)
1~9 $5.509
10~49 $4.515
50~99 $3.578
100~499 $3.398
500~999 $2.925
1,000~ $2.821
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Pricing (USD)Total Amount
Quantity