R6030ENX
ROHM
|
|
|
Images are for reference only.
See product Specifications.
Inventory Information
| Available QTY | |
|---|---|
|
500 Real-time MOQ：1 SPQ:1 |
Scheduled Delivery (back-order) 0 |
| Stock type |
Franchise |
|---|
| Supplier Rank | ：A-1 |
| COO | ：KR |
Product Attributes
| Category |
Discrete semiconductors Discrete single |
| Manufacturer | ROHM |
| Case/Package | TO-220-3 |
| Continuous Drain Current (ID) | 30 A |
| Drain to Source Breakdown Voltage | 600 V |
| Drain to Source Resistance | 115 mΩ |
| Drain to Source Voltage (Vdss) | 600 V |
| Fall Time | 60 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Height | 15.4 mm |
| Input Capacitance | 2.1 nF |
| Lead Free | Lead Free |
| Length | 10.3 mm |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 86 W |
| Min Operating Temperature | -55 °C |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Packaging | Bulk |
| Rds On Max | 130 mΩ |
| REACH SVHC | No SVHC |
| Rise Time | 55 ns |
| Threshold Voltage | 4 V |
| Turn-Off Delay Time | 190 ns |
| Turn-On Delay Time | 40 ns |
| Weight | 2.565008 g |
| Width | 4.8 mm |
| Series | |
| FET Type | MOSFET Nch |
| FET Feature | |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id)@25°C | 30A |
| Drive Voltage (Max Rds On, Min Rds On) | 0.115Ohms |
| Rds On (Max)@Id (Vgs) | |
| Gate Charge (Max)@Vgs (Qg) | 85nC |
| Input Capacitance (Max)@Vds (Ciss) | |
| Power Dissipation (Max) | |
| Operating Temperature | |
| Application | |
| Mounting Type | Through Hole |
| Package | TO-220FM |
Alternative Part Numbers
| Quantity | Unit price (FOB JAPAN) |
|---|---|
| 1~9 | $5.509 |
| 10~49 | $4.515 |
| 50~99 | $3.578 |
| 100~499 | $3.398 |
| 500~999 | $2.925 |
| 1,000~ | $2.821 |
| - | - |
| - | - |
