R6030ENX
ROHM
Inventory Information
Available QTY | |
---|---|
500 Real-time MOQ:1 SPQ:1 |
Scheduled Delivery (back-order) 0 |
Stock type |
Franchise |
---|
Supplier Rank | :A-1 |
COO | :KR |
Product Attributes
Category |
Discrete semiconductors Discrete single |
Manufacturer | ROHM |
Case/Package | TO-220-3 |
Continuous Drain Current (ID) | 30 A |
Drain to Source Breakdown Voltage | 600 V |
Drain to Source Resistance | 115 mΩ |
Drain to Source Voltage (Vdss) | 600 V |
Fall Time | 60 ns |
Gate to Source Voltage (Vgs) | 20 V |
Height | 15.4 mm |
Input Capacitance | 2.1 nF |
Lead Free | Lead Free |
Length | 10.3 mm |
Max Operating Temperature | 150 °C |
Max Power Dissipation | 86 W |
Min Operating Temperature | -55 °C |
Mount | Through Hole |
Number of Channels | 1 |
Number of Pins | 3 |
Number of Terminals | 3 |
Packaging | Bulk |
Rds On Max | 130 mΩ |
REACH SVHC | No SVHC |
Rise Time | 55 ns |
Threshold Voltage | 4 V |
Turn-Off Delay Time | 190 ns |
Turn-On Delay Time | 40 ns |
Weight | 2.565008 g |
Width | 4.8 mm |
Series | |
FET Type | MOSFET Nch |
FET Feature | |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id)@25°C | 30A |
Drive Voltage (Max Rds On, Min Rds On) | 0.115Ohms |
Rds On (Max)@Id (Vgs) | |
Gate Charge (Max)@Vgs (Qg) | 85nC |
Input Capacitance (Max)@Vds (Ciss) | |
Power Dissipation (Max) | |
Operating Temperature | |
Application | |
Mounting Type | Through Hole |
Package | TO-220FM |
Alternative Part Numbers
Quantity | Unit price (FOB JAPAN) |
---|---|
1~9 | $5.509 |
10~49 | $4.515 |
50~99 | $3.578 |
100~499 | $3.398 |
500~999 | $2.925 |
1,000~ | $2.821 |
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