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- R6509KNXC7G(ROHM)
R6509KNXC7G
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产品属性
| Category | 分立半导体 Discrete single |
| Manufacturer | ROHM |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | MOSFET (Metal Oxide) |
| Drive Voltage (Max Rds On, Min Rds On) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9A (Ta) |
| Power Dissipation (Max) | 540 pF @ 25 V |
| Rds On (Max) @ Id, Vgs | 48W (Tc) |
| Vgs(th) (Max) @ Id | 585mOhm @ 2.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5V @ 230µA |
| Vgs (Max) | 16.5 nC @ 10 V |
| Operating Temperature Range | ±20V |
| Applications | 150°C (TJ) |
| Device Package | Through Hole |
| Technology | TO-220-3 Full Pack |
・Product description information is provided for convenience to provide an overview of the product.
・Please refer to the data sheet issued by the manufacturer for the relevant official information.
库存量: 1,000
MOQ:1
SPQ:1
预计进货数量（延期交货）: 0
| 购买数量 | 单价(FOB JAPAN) |
|---|---|
| 1 - 49 | $1.165 |
| 50 - 99 | $0.839 |
| 100 - 299 | $0.776 |
| 300 - 499 | $0.735 |
| 500 - 999 | $0.726 |
| 1,000 - 1,999 | $0.72 |
| 2,000 - 3,999 | $0.717 |
| 4,000 - | $0.716 |
